Samsung Electronics announced its mass producing of the new DDR3 memory, based on a new 20 nanometer process technology. Samsung uses the ArF lithography, in order to scale the DRAM to the new level.
With DRAM memory, where each cell consists of a capacitor and a transistor linked to one another, scaling is more difficult than with NAND Flash memory in which a cell only needs a transistor. To continue scaling for more advanced DRAM, Samsung refined its design and manufacturing technologies and came up with a modified double patterning and atomic layer deposition.
Samsung's modified double patterning technology marks a new milestone, by enabling 20nm DDR3 production using current photolithography equipment and establishing the core technology for the next generation of 10nm-class DRAM production. Samsung also created ultrathin dielectric layers of cell capacitors with a better uniformity, which has resulted in higher cell performance.
With the new 20nm DDR3 DRAM applying these technologies, Samsung also has improved manufacturing productivity, which is over 30 percent higher than that of the preceding 25 nanometer DDR3.
In addition, the new 20nm 4Gb DDR3 based modules can save up to 25 percent of the energy consumed by equivalent modules fabricated using the previous technology.
"Samsung's new energy-efficient 20-nanometer DDR3 DRAM will rapidly expand its market base throughout the IT industry including the PC and mobile markets, quickly moving to mainstream status," said Young-Hyun Jun, executive vice president, memory sales and marketing, Samsung Electronics. "Samsung will continue to deliver next-generation DRAM and green memory solutions ahead of the competition, while contributing to the growth of the global IT market in close cooperation with our major customers."